ASML targets 2033 for High-NA EUV with larger masks, promising a 40% productivity gain

Sep 9, 2026 - 07:00
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ASML targets 2033 for High-NA EUV with larger masks, promising a 40% productivity gain

High-NA EUV is ASML's next major lithography platform. It can print finer features than today's EUV tools, which could help chipmakers build denser designs at advanced nodes. But its smaller mask limits the die area that can be printed in one exposure.

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